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This report presents a Structural Analysis of the XPoint memory die extracted from the Intel 29P16B1BLDNF2 device. The 3D XPoint memory is a first-of-its-kind non-volatile memory (NVM). The XPoint memory cell is in a cross-point array, stacked on the substrate with CMOS circuits, in a CMOS under array (CUA) configuration. Each 3D XPoint memory cell uses a PCM-based storage cell in series with an OTS-based selector device.
This report contains the following detailed information:
Selected downstream and teardown photographs
Package photographs, package X-ray, die markings, and die features
Die utilization analysis, including an annotated gate level die photograph and functional block measurements
Selected layout feature analysis including metal, via, and gate structures, and memory cell layout
Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses of the dielectrics, metals, vias and contacts, transistors, isolation, and major structural features
High-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) analyses of the transistor gate, gate dielectric, and S/D material
Critical dimensions of the die features
TEM-based energy dispersive spectroscopy (TEM-EDS) and electron energy loss spectroscopy (EELS) analyses of the dielectrics, metals, and transistors
Scanning capacitance microscopy (SCM) and secondary ion mass spectrometry (SIMS) analyses of the wells and substrate
This report presents a Structural Analysis of the XPoint memory die extracted from the Intel 29P16B1BLDNF2 device.