Interested in this report?

Published: 29 June 2017

This report presents a Digital Functional Analysis of the Qualcomm HG11-P5219-1 die found inside the Qualcomm MSM8998 Snapdragon 835 PoP component. This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels including, fin/STI, gate, contacts, and minimum pitch metals
  • Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
  • Plan-view optical micrograph of the die delayered to the gate level
  • Identification of major functional blocks on a gate level die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and gate level die photographs delivered in the ICWorks Browser
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

Report Description

This report presents a Digital Functional Analysis of the Qualcomm HG11-P5219-1 die found inside the Qualcomm MSM8998 Snapdragon 835 PoP component.

Recent OMR Reports

CAR-1801-901  |   Published: 15 August 2018
The following is a CircuitVision Analysis report on the Intel 29F01T2ANCTH2, 64-layer 3D NAND Flash memory (B16A die). The Intel 29F01T2ANCTH2 device was extracted from an Intel SC2KW512GBX1 solid state drive (SSD).
FAR-1807-802  |   Published: 15 August 2018
This report presents a Basic Functional Analysis of the MediaTek BM10610B die found inside the MediaTek MT2625DA package. The MediaTek MT2625DA package was extracted from the Gosuncn ME3616 NB-IoT module....
SCA-1807-805  |   Published: 14 August 2018
Shared Construction Analysis