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Published: 14 December 2017

The Advanced CMOS Essentials (ACE) deliverable for NAND flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

  • Downstream product teardown
  • Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
  • SEM bevel through the logic region and NAND flash
  • SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
  • One (or two) TEM cross sections, orthogonal to the word and/or bit lines, showing the NAND flash array cells, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
  • TEM bevel through the NAND flash
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

Report Description

This report presents Part 1 of an Advanced CMOS Essentials on the Hynix H27EGLM 48-layer 204 8 Gb 3D V3-NAND flash found in the H23Q2T8QK6MES-BC device.

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