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The Advanced CMOS Essentials (ACE) deliverable for NAND flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
Downstream product teardown
Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
SEM bevel through the logic region and NAND flash
SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
One (or two) TEM cross sections, orthogonal to the word and/or bit lines, showing the NAND flash array cells, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
TEM bevel through the NAND flash
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
This report presents Part 1 of an Advanced CMOS Essentials on the Hynix H27EGLM 48-layer 204 8 Gb 3D V3-NAND flash found in the H23Q2T8QK6MES-BC device.