Interested in this report?

Published: 9 March 2018

The complete ACE Part 2 deliverable includes a concise analyst’s summary of critical device metrics, with focus on salient word line and bit line connectivity features and supported by the following analyses and image folders:

  • Large area scanning electron microscopy (SEM) image mosaic of word line and bit line areas, showing all metal levels required to extract connectivity of the array to the word line and bit line decoder regions
  • SEM image mosaics viewable in the CircuitVisionsoftware
  • Low-voltage (LV) and high-voltage (HV) periphery transistor transmission electron microscopy (TEM) detail images
  • Extended materials analysis, including energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) line scan data
  • Tabular summary of key dimensions
The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

Report Description

This product presents Part 2 of an Advanced Memory Cell Essentials of the Intel 29F01T2ANCTH2 64-Layer 3D NAND flash.

Recent OMR Reports

SCE-1802-802  |   Published: 17 July 2018
This project presents a Standard Cell Essentials analysis of the HiSilicon Hi3670 Kirin 970 application processor, built in TSMC’s 10 nm high-k metal gate (HKMG) FinFET CMOS process. This analysis is focused...
SCE-1802-803  |   Published: 17 July 2018
This project presents a Standard Cell Essentials analysis of the HiSilicon Hi3670 Kirin 970 dummy structures. It is a collection of SEM montage images showing transition regions between an I/O IP block...
CAR-1712-210  |   Published: 17 July 2018
This report presents a CircuitVision Analysis of selected blocks on the Samsung Shannon 955 RF transceiver. The following report contains a full set of schematics and annotated photographs divided into...