Interested in this report?

Published: 10 April 2017

The Advanced CMOS Essentials (ACE) deliverable for DRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

  • Downstream product teardown
  • Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
  • SEM bevel through the logic region and DRAM
  • SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
  • Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array , lower metals and dielectrics, transistor gates, isolation, and other FEOL features

  • The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors

    Report Description

    This report presents an Advanced CMOS Essentials on the Samsung K4A8G085WC-BCRC 1x nm 8 Gb DDR4 SDRAM Process.

    Recent OMR Reports

    ARC-1807-801  |   Published: 16 October 2018
    The following is an RF Architecture analysis of the 2.4 GHz transceiver macro in the NXP/Freescale KW41Z SOC with Bluetooth low energy, Generic FSK (at 250, 500 and 1000 kbps) or IEEE Standard 802.15.4 RF connectivity.
    EXR-1810-802  |   Published: 10 October 2018
    This report summarizes an exploratory analysis of the dopant structure of the Sony IMX206 [1], which was extracted from the Canon PowerShot SX600HS camera. The report includes scanning electron microscopy...
    FAR-1808-804  |   Published: 5 October 2018
    This report presents a Basic Functional Analysis of the Marvell KINGLET.2.1.1 die found inside the Marvell 88MW300-NAP2. The 88MW300-NAP2 was extracted from the Panasonic ENW49C01A3KF. This report contains...