Interested in this report?

Published: 10 April 2017

The Advanced CMOS Essentials (ACE) deliverable for DRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:

  • Downstream product teardown
  • Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
  • SEM bevel through the logic region and DRAM
  • SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
  • Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array , lower metals and dielectrics, transistor gates, isolation, and other FEOL features

  • The results of TEM-EDS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors

    Report Description

    This report presents an Advanced CMOS Essentials on the Samsung K4A8G085WC-BCRC 1x nm 8 Gb DDR4 SDRAM Process.

    Recent OMR Reports

    CAR-1801-901  |   Published: 15 August 2018
    The following is a CircuitVision Analysis report on the Intel 29F01T2ANCTH2, 64-layer 3D NAND Flash memory (B16A die). The Intel 29F01T2ANCTH2 device was extracted from an Intel SC2KW512GBX1 solid state drive (SSD).
    FAR-1807-802  |   Published: 15 August 2018
    This report presents a Basic Functional Analysis of the MediaTek BM10610B die found inside the MediaTek MT2625DA package. The MediaTek MT2625DA package was extracted from the Gosuncn ME3616 NB-IoT module....
    SCA-1807-805  |   Published: 14 August 2018
    Shared Construction Analysis