Memory Detailed Structural Analysis of the Micron 16 nm NAND Flash Memory

Published: 23 May 2014

This report is a detailed structural analysis (MDSA) of the Micron 16 nm node NAND Flash memory (Intel L95B 2012(M)(C) die markings). At 16 nm, this device is not only the most advanced Flash memory produced to date, it also features the most advanced processing node of any semiconductor device. Target applications include: consumer SSDs, USB drives and Flash cards, tablets, ultrathin devices, mobile handsets and cloud storage. The device is fabricated using a three metal (W metal 1, Cu metal 2, Al metal 3), metal control gate, composite hi-k/oxide interpoly dielectric (IPD), polysilicon floating gate, oxide filled STI, 16 nm CMOS process. Micron continues to be the only Flash memory maker using a planar control gate/IDP/ floating gate structure for its NAND cells. An impressive 128 cells are included in the NAND string. The NAND array features a 32 nm bitline pitch, 40 nm word line pitch and 0.0013 µm2 cell area. The reported results are derived from scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP).

Other Structural / Process Reports Search All Reports

Recent OMR Reports

  • Report  |  0415-39088-O-4SL1-100  |   Published: 16 December 2015
    This report provides a brief technical snapshot of the Pentax 0007-A00 Image Processor from the Pentax K-3 DSLR Camera. The report includes: High resolution optical images of the package top and bottom,...
  • Report  |  0215-38827-O-5DM-100  |   Published: 7 May 2015
    The MN101LR05D is a low power consumption, 8-bit single-chip microcontroller intended for portable healthcare, security equipment or sensor processing applications. The MN101LR05D features a 10 MHz 8-bit...
  • Report  |  0315-39040-O-5DM-100  |   Published: 30 April 2015
    Samsung, the world leader in advanced memory technology, has recently introduced its latest generation 20 nm node M393A4K40BB0-CPB 32 GB, 2133 MHz, DDR4 memory modules containing thirty-six K4A8045WB...