This report is a detailed structural analysis (MDSA) of the Micron 16 nm node NAND Flash memory (Intel L95B 2012(M)(C) die markings). At 16 nm, this device is not only the most advanced Flash memory produced to date, it also features the most advanced processing node of any semiconductor device. Target applications include: consumer SSDs, USB drives and Flash cards, tablets, ultrathin devices, mobile handsets and cloud storage.
The device is fabricated using a three metal (W metal 1, Cu metal 2, Al metal 3), metal control gate, composite hi-k/oxide interpoly dielectric (IPD), polysilicon floating gate, oxide filled STI, 16 nm CMOS process. Micron continues to be the only Flash memory maker using a planar control gate/IDP/ floating gate structure for its NAND cells.
An impressive 128 cells are included in the NAND string. The NAND array features a 32 nm word line pitch, 40 nm bitline pitch and 0.0013 µm2 cell area.
The reported results are derived from scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP).