Memory Detailed Structural Analysis of the Samsung K9CFGY8U5A-CCK0 21 nm TLC NAND Flash

Published: 22 April 2013

This report is a detailed analysis of the Samsung K9CFGY8U5A-CCK0 21 nm TLC NAND Flash memory. The K9CFGY8U5A-CCK0 21 nm flash memory is one of the industry’s leading flash memory devices, packing 64 Gbits into a single 103 mm2 die, using conventional floating-gate flash memory technology. This NAND FLASH was found in SAMSUNG’s latest SSD drive known as “SSD840” (256GB). The K9CFGY8U5A-CCK0 is fabricated using a triple metal, double poly, 21 nm CMOS process. The single transistor flash cell measures approximately 42 nm by 46 nm for a physical cell area of 0.0019µm2. The reported results are derived from scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP).

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Samsung K9CFGY8U5A-CCK0

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