Interested in this report?

Published: 22 April 2013

This report is a detailed analysis of the Samsung K9CFGY8U5A-CCK0 21 nm TLC NAND Flash memory. The K9CFGY8U5A-CCK0 21 nm flash memory is one of the industry’s leading flash memory devices, packing 64 Gbits into a single 103 mm2 die, using conventional floating-gate flash memory technology. This NAND FLASH was found in SAMSUNG’s latest SSD drive known as “SSD840” (256GB). The K9CFGY8U5A-CCK0 is fabricated using a triple metal, double poly, 21 nm CMOS process. The single transistor flash cell measures approximately 42 nm by 46 nm for a physical cell area of 0.0019µm2. The reported results are derived from scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP).

Recent OMR Reports

Buy Now  |   Price: $9,000.00 (USD)   |   Report  |  DEF-1712-801  |   Published: 2 February 2018
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders:...
Buy Now  |   Price: $19,500.00 (USD)   |   Report  |  ACE-1708-804  |   Published: 31 January 2018
The Advanced CMOS Essentials (ACE) deliverable for Advanced Packaging comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following...
Buy Now  |   Price: $7,500.00 (USD)   |   Report  |  FAR-1711-902  |   Published: 26 January 2018
This report presents a Basic Functional Analysis of the BCM15951 die found inside the Broadcom BCM15951B0KUB2G package. The BCM15951B0KUB2G package was extracted from the Apple iPhone X A1901. This report...