Interested in this report?

Published: 22 April 2013

This report is a detailed analysis of the Samsung K9CFGY8U5A-CCK0 21 nm TLC NAND Flash memory. The K9CFGY8U5A-CCK0 21 nm flash memory is one of the industry’s leading flash memory devices, packing 64 Gbits into a single 103 mm2 die, using conventional floating-gate flash memory technology. This NAND FLASH was found in SAMSUNG’s latest SSD drive known as “SSD840” (256GB). The K9CFGY8U5A-CCK0 is fabricated using a triple metal, double poly, 21 nm CMOS process. The single transistor flash cell measures approximately 42 nm by 46 nm for a physical cell area of 0.0019µm2. The reported results are derived from scanning electron microscope (SEM), transmission electron microscope (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP).

Recent OMR Reports

Report  |  1016-43837-O-6CV-100  |   Published: 31 March 2017
This CircuitVision report provides a set of hierarchical schematics for the Intel 5750 RF Transceiver. The circuit blocks extracted and analyzed for the report include the Transmit Path, Dual-Channel Receive...
Report  |  0217-43520-O-6CV-100  |   Published: 27 February 2017
This CircuitVision report provides a set of hierarchical schematics for the NOVATEK NT39986H. The circuit blocks extracted and analyzed for the report include the Source Driver Data Path. This report also...
Report  |  1116-43836-O-6CV-100  |   Published: 24 February 2017
Qorvo 81003M Envelope Tracker Module contains single device in addition to surface mount components. The main Envelope Tracker die consists of boost regulators, linear regulator, biasing circuitry and...