Interested in this report?

Published: 4 June 2013

This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.

Recent OMR Reports

Buy Now  |   Price: $7,500.00 (USD)   |   Report  |  FAR-1708-801  |   Published: 17 October 2017
This report presents a Digital Functional Analysis of the AMD 2V5-089400-00 die found inside the AMD 215-0894252 graphics processor. The 215-0894252 was extracted from an AMD Radeon Vega Frontier Edition...
Buy Now  |   Price: $12,000.00 (USD)   |   Report  |  EXR-1707-801  |   Published: 12 October 2017
The report summarizes an exploratory analysis of the Samsung K3UH5H50MM-NGCJ low power DDR4X mobile DRAM extracted from the Samsung Galaxy S8 (model SM-G950W). The Samsung K3UH5H50MM-NGCJ contains the...
Buy Now  |   Price: $75,000.00 (USD)   |   Report  |  SAR-1706-801  |   Published: 6 October 2017
This report presents a Structural Analysis of the XPoint memory die extracted from the Intel 29P16B1BLDNF2 device. The 3D XPoint memory is a first-of-its-kind non-volatile memory (NVM). The XPoint memory...