Interested in this report?

Published: 4 June 2013

This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.

Recent OMR Reports

DEF-1803-803  |   Published: 19 April 2018
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
DEF-1803-802  |   Published: 19 April 2018
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
FAR-1801-802  |   Published: 6 April 2018
This report presents a Digital Functional Analysis of the Intel SKX die found inside the Intel CD8067303593400S R3KE Xeon Gold 6126F server processor, which is designed for the server market. Intel has...