A Process Comparison of Samsung, Toshiba/Sandisk, IMFT and SK-Hynix 2x nm NAND Flash Memory Cells

Published: 4 June 2013

This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.

Other Technical Intelligence Reports Search All Reports

Recent OMR Reports

  • Report  |  1014-37935-O-5DM-101  |   Published: 31 December 2014
    This report is a detailed structural analysis of the SK Hynix H2JTDG8UD1BMS, 16 GB, 16 nm node MLC NAND Flash memory used in the Apple iPhone 6 Plus smartphone. The device is fabricated using a three...
  • Report  |  1214-37469-O-5TC-100  |   Published: 26 December 2014
    The transistor characteristics report of the Samsung K9HQGY8S5M 3D V-NAND Flash Memory provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors. The transistor report includes...
  • Report  |  1214-36281-O-6CV-100  |   Published: 24 December 2014
    This CircuitVision report provides a set of hierarchical schematics for the Nanya NT5CB128M16HP 42 nm DDR3 SDRAM. The circuit blocks extracted and analyzed for the report include the sense amplifier, SP/SN...