31 December 2014
This report is a detailed structural analysis of the SK Hynix H2JTDG8UD1BMS, 16 GB, 16 nm node MLC NAND Flash memory used in the Apple iPhone 6 Plus smartphone. The device is fabricated using a three...
26 December 2014
The transistor characteristics report of the Samsung K9HQGY8S5M 3D V-NAND Flash Memory provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors. The transistor report includes...
24 December 2014
This CircuitVision report provides a set of hierarchical schematics for the Nanya NT5CB128M16HP 42 nm DDR3 SDRAM. The circuit blocks extracted and analyzed for the report include the sense amplifier, SP/SN...