Interested in this report?

Published: 11 December 2015

The transistor characteristics report of the TSMC 16 nm finFET Process in the Apple A9 Processor provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors. The transistor report includes plotted transfer and output characteristics and tabulated measurements of key performance benchmarks measured at -20, 25, and 80 °C. Specific DC Analysis Benchmarks of the NMOS and PMOS transistors include: • Threshold voltage (linear and saturated) • Drive Current (IDSAT) • Leakage current (both gate and channel) • Sub-threshold slope • Transconductance • Punch-through voltage • Process gain factor • IDS vs. VGS plot • IDS vs. VDS plot Supporting cross sections and imaging will include: • Package (top) • Package (bottom) • Package X-ray • Die photograph • Die Marking • SEM topographical image of measured NMOS and PMOS transistors • TEM cross-section showing NMOS and PMOS gate length • TEM cross-section showing NMOS and PMOS fin width

Recent OMR Reports

EXR-1804-803  |   Published: 8 June 2018
This report presents an Exploratory Analysis of the DRAM die, with the markings K4F2A164HF, found in the Samsung S5K2L3SX rear camera module extracted from a Samsung Galaxy S9+ (model SM-G965N) smartphone.
FAR-1804-803  |   Published: 7 June 2018
This report presents a Digital Functional Analysis of the MediaTek MT6771V Helio P60 chipset’s AM10788B die, found inside the OPPO PACM00 R15 smartphone. The MediaTek MT6771V Helio P60 chipset, manufactured...
IPR-1802-801  |   Published: 6 June 2018
This report is an Imager Process Review of the Samsung S5K2X7SP 24 megapixel (MP) stacked BI CIS extracted from the Vivo V7+ smartphone’s front-facing camera. The S5K2X7SP is the first image sensor with...