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Published: 11 September 2014

The Techinsights Multi-temperature transistor characteristics report provides key D.C. electrical measurements for two NMOS and two PMOS transistors from the core region of the Oracle T5 SPARC processor. The report includes plotted transfer and output characteristics and tabulated measurements of key performance benchmarks measured at -20 °C, 25 °C and 80 °C. The transfer characteristics (ID vs. VGS) and output characteristics (ID vs. VDS) are reported for both NMOS and PMOS transistors with a VDS voltage swing of 1.0 V at -20 ºC, 25 ºC and 80 ºC. The body effect, gate leakage, and punchthrough characteristics are also reported for both NMOS and PMOS transistors. Electrical parameters including linear threshold voltages, sub-threshold swing, transconductance, saturation and leakage currents, processes gain factor, breakdown, gate leakage and drain punch-through voltages are reported for both NMOS and PMOS transistors.

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