TechInsights has performed a Quick Turn Teardown (QTT) of Apple’s latest product, the iPhone 5s.
On September 10, 2013, Apple announced two new iPhones, the 5s and 5c. Since the announcement, we at TechInsights have been anxiously waiting for the opportunity to get our hands on the devices. Well that moment has finally arrived. Both iPhones are currently in house and the teardowns have begun. Stay tuned for teardown sequence photos, component identification and design wins, as well as estimated bill of materials.
Although Elpida’s published part decoder doesn’t include LPDDR3 devices, the ‘F’ prefix should indicate the product family as LPDDR3 (a ‘B’ would indicate LPDDR2). The remainder of the number confirms the use of 4 Gb chips - with two chips in the memory package.
The NAND flash memory on the iPhone 5s is manufactured by SK Hynix (package marking H2JTFG8YD2MBR) , conforming to their E2NAND3.0 standard. E2NAND3.0 uses advanced ECC, buffering and processing to improve performance and reliability. The flash controller iscentered on the 8-die flash stack in order to maintain timing symmetry. Die centering requires mounting the controller under the flash stack in order to maintain workable wirebond lengths. The NAND flash is manufactured in Hynix’s 21 nm process, which they designate “2ynm class”.
It appears that Broadcom has done a re-spin of the layout of their BCM4334. Here are the two versions for comparison.